• DocumentCode
    689016
  • Title

    CMOS compatible argon-ion-implanted C-band silicon waveguide photodetector

  • Author

    Souhan, Brian ; Grote, Richard R. ; Driscoll, Jeffrey B. ; Bakhru, Hassaram ; Osgood, Richard M.

  • Author_Institution
    Microelectron. Sci. Labs., Columbia Univ., New York, NY, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Extrinsic Si waveguide photodiodes created through Ar+ implantation are shown to be stable up to 350°C with 0.29 A/W internal quantum efficiency and 10 GHz frequency response. Similar Si+ implantation defects anneal out at 300°C.
  • Keywords
    annealing; argon; ion implantation; optical fabrication; optical waveguides; photodetectors; photodiodes; silicon; Ar; Ar+ implantation; CMOS compatible argon-ion-implanted C-band silicon waveguide photodetector; Si; Si+ implantation defects; annealling; extrinsic Si waveguide photodiode; frequency 10 GHz; frequency response; internal quantum efficiency; temperature 350 degC; Absorption; Annealing; Frequency response; Loss measurement; Optical waveguides; Silicon; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689016