Title :
CMOS compatible argon-ion-implanted C-band silicon waveguide photodetector
Author :
Souhan, Brian ; Grote, Richard R. ; Driscoll, Jeffrey B. ; Bakhru, Hassaram ; Osgood, Richard M.
Author_Institution :
Microelectron. Sci. Labs., Columbia Univ., New York, NY, USA
Abstract :
Extrinsic Si waveguide photodiodes created through Ar+ implantation are shown to be stable up to 350°C with 0.29 A/W internal quantum efficiency and 10 GHz frequency response. Similar Si+ implantation defects anneal out at 300°C.
Keywords :
annealing; argon; ion implantation; optical fabrication; optical waveguides; photodetectors; photodiodes; silicon; Ar; Ar+ implantation; CMOS compatible argon-ion-implanted C-band silicon waveguide photodetector; Si; Si+ implantation defects; annealling; extrinsic Si waveguide photodiode; frequency 10 GHz; frequency response; internal quantum efficiency; temperature 350 degC; Absorption; Annealing; Frequency response; Loss measurement; Optical waveguides; Silicon; Thermal stability;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
