• DocumentCode
    689141
  • Title

    Deposited low temperature silicon GHz modulator

  • Author

    Lee, Y.H.D. ; Thompson, Michael O. ; Lipson, Michal

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved.
  • Keywords
    CMOS integrated circuits; electro-optical modulation; excimer lasers; integrated optics; laser beam annealing; optical fabrication; optical materials; silicon; CMOS backend integration; Si; bit rate 3 Gbit/s; carrier injection modulation; deposited low temperature silicon GHz modulator; low temperature excimer laser annealing technique; multigigahertz polysilicon electro-optic modulator; CMOS integrated circuits; Modulation; Optical waveguides; Silicon-on-insulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689141