DocumentCode
689473
Title
Anisotropic structure induced electrical properties of a-plane InN
Author
Chang, Pin-Hsin ; Chia, J.-W. ; Gwo, S. ; Ahn, Hyo-Sung
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
Terahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects.
Keywords
III-V semiconductors; anisotropic media; indium compounds; semiconductor thin films; terahertz spectroscopy; InN; anisotropic structure induced electrical properties; nonpolar indium nitride film; terahertz spectroscopy; Anisotropic magnetoresistance; Films; Scattering; Spectroscopy; Stacking; Surface morphology; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833857
Link To Document