• DocumentCode
    68953
  • Title

    A New Method to Determine Avalanche Multiplication Factor Using Vector Network Analyzer for p-n Junctions

  • Author

    Chie-In Lee ; Wei-Cheng Lin ; Yan-Ting Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    24
  • Issue
    9
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    646
  • Lastpage
    648
  • Abstract
    In this letter, a new and simple radio-frequency (RF) -based method with dead-space-based theory considered for mixed avalanche and tunneling mechanisms is presented to determine the pure avalanche multiplication factor up to near 1 MV/cm for the first time. By extracting the equivalent circuit parameters based on a vector network analyzer, the avalanche multiplication factor can be determined and can be distinguished from the tunneling multiplication factor. The saturated avalanche multiplication factor with increased electric field is observed at high field. This saturated phenomenon obtained from experimental data is the first reported result for the two-terminal p-n junction. The validity of the obtained avalanche multiplication factor is verified by the dead-space-based theory. The proposed alternative avalanche multiplication factor extraction can be applied to breakdown characterization for the state-of-the-art device such as impact-ionization metal-oxide semiconductor (I-MOS) transistor and tunnel devices.
  • Keywords
    avalanche breakdown; avalanche diodes; elemental semiconductors; equivalent circuits; network analysers; p-n junctions; silicon; tunnelling; I-MOS transistor; RF-based method; Si; avalanche diode; avalanche multiplication factor; breakdown characterization; dead-space-based theory; electric field; equivalent circuit parameter extraction; impact-ionization metal-oxide semiconductor transistor; radiofrequency-based method; saturated avalanche multiplication factor; tunnel device; tunneling multiplication factor; two-terminal p-n junction; vector network analyzer; Electric breakdown; P-n junctions; Radio frequency; Semiconductor diodes; Substrates; Tunneling; Avalanche multiplication factor; high-breakdown; p-n junction; vector network analyzer (VNA);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2014.2330500
  • Filename
    6843367