DocumentCode :
689601
Title :
Properties of InAs quantum dots in nanoimprint lithography patterned GaAs pits
Author :
Tommila, J. ; Schramm, Alexander ; Hakkarainen, T.V. ; Dumitrescu, M. ; Guina, M. ; Heinonen, E.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
We report on the structural and optical properties of InAs quantum dots fabricated into nanoimprint lithography patterned GaAs pits. The size-dependent properties of single site-controlled quantum dots and their integration into optical microcavities are presented.
Keywords :
III-V semiconductors; indium compounds; microcavities; nanofabrication; nanolithography; nanophotonics; semiconductor quantum dots; soft lithography; GaAs; InAs; nanoimprint lithography; optical microcavities; optical properties; single site-controlled quantum dots; size-dependent properties; structural properties; Excitons; Gallium arsenide; Optical device fabrication; Optical imaging; Optical reflection; Quantum dots; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833988
Link To Document :
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