DocumentCode
689703
Title
Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells
Author
Guan Sun ; Ruolin Chen ; Ding, Yujie J. ; Hongping Zhao ; Guangyu Liu ; Jing Zhang ; Tansu, N.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We demonstrate that photoluminescence and terahertz intensities show complementing trends for staggered InGaN quantum wells (QWs), dictated by separation of electrons and holes.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; terahertz wave spectra; wide band gap semiconductors; InGaN; electron-hole separation; photoluminescence; staggered quantum wells; terahertz intensity; Charge carrier processes; Electric fields; Gallium nitride; Laser beams; Laser excitation; Photoluminescence; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6834090
Link To Document