Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

Author

Ya-Ju Lee ; Yung-Chi Yao ; Chia-Hao Yang

Author_Institution

Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2013

fDate

9-14 June 2013

Firstpage

1

Lastpage

2

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

Keywords

electrical contacts; elemental semiconductors; indium compounds; nanowires; p-n junctions; semiconductor growth; semiconductor thin films; silicon; solar cells; tin compounds; ITO; Si; axial p-n junction silicon nanowire solar cells; direct electrical contact scheme; grid electrode fabrication; incident ITO vapor-flow; nearly continuous film; oblique-angle deposition; photovoltaic applications; shadowing effect; slanted indium-tin-oxide film; vertically aligned silicon nanowire axial p-n junction; Films; Indium tin oxide; P-n junctions; Photovoltaic cells; Reflectivity; Silicon; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2013 Conference on

Conference_Location

San Jose, CA

Type

conf

Filename

6834123