Title :
Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells
Author :
Ya-Ju Lee ; Yung-Chi Yao ; Chia-Hao Yang
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.
Keywords :
electrical contacts; elemental semiconductors; indium compounds; nanowires; p-n junctions; semiconductor growth; semiconductor thin films; silicon; solar cells; tin compounds; ITO; Si; axial p-n junction silicon nanowire solar cells; direct electrical contact scheme; grid electrode fabrication; incident ITO vapor-flow; nearly continuous film; oblique-angle deposition; photovoltaic applications; shadowing effect; slanted indium-tin-oxide film; vertically aligned silicon nanowire axial p-n junction; Films; Indium tin oxide; P-n junctions; Photovoltaic cells; Reflectivity; Silicon; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
