• DocumentCode
    689748
  • Title

    The crystalline and optical properties of (1122) semipolar GaN and InGaN/GaN MQWs on (1100) M-sapphire

  • Author

    Yun-Jing Li ; Shih-Pang Chang ; Kuok-Pan Sou ; Jet-Rung Chang ; Ruey-Wen Chang ; Chun-Yen Chang ; Yuh-Jen Cheng

  • Author_Institution
    Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the growth temperature effect on the crystalline and optical properties of (112̅2) semipolar GaN and InGaN/GaN MQWs. It shows that a lower growth temperature at 1020 °C produces better crystalline and optical properties.
  • Keywords
    III-V semiconductors; electroluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; (11̅00) m-sapphire; (112̅2) semipolar GaN MQW; (112̅2) semipolar InGaN-GaN MQW; Al2O3; GaN; InGaN-GaN; crystalline properties; growth temperature effect; optical properties; temperature 1020 C; Crystals; Gallium nitride; Optical polarization; Optical surface waves; Quantum well devices; Surface morphology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6834135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=689748