Title :
A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires
Author :
Ruomeng Huang ; Kai Sun ; Kiang, Kian S. ; Ruiqi Chen ; Yudong Wang ; De Groot, C. ; Gholipour, B. ; Hewak, D.W. ; Hector, Andrew L. ; Reid, Gillian
Author_Institution :
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.
Keywords :
antimony compounds; etching; germanium compounds; nanofabrication; nanowires; phase change materials; Ge2Sb2Te5; nanometer phase change nanowires; naowire dimension; novel e-beam free process; novel top-down fabrication process; phase change functionality nanowires; phase change material nanowires; top-down spacer etch process; Educational institutions; Etching; Fabrication; Lithography; Materials; Nanowires; Scanning electron microscopy; nanowire; phase change materials; spacer etch;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
Conference_Location :
Minneapolis, MN
DOI :
10.1109/NVMTS.2013.6851047
