• DocumentCode
    692155
  • Title

    A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires

  • Author

    Ruomeng Huang ; Kai Sun ; Kiang, Kian S. ; Ruiqi Chen ; Yudong Wang ; De Groot, C. ; Gholipour, B. ; Hewak, D.W. ; Hector, Andrew L. ; Reid, Gillian

  • Author_Institution
    Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
  • fYear
    2013
  • fDate
    12-14 Aug. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.
  • Keywords
    antimony compounds; etching; germanium compounds; nanofabrication; nanowires; phase change materials; Ge2Sb2Te5; nanometer phase change nanowires; naowire dimension; novel e-beam free process; novel top-down fabrication process; phase change functionality nanowires; phase change material nanowires; top-down spacer etch process; Educational institutions; Etching; Fabrication; Lithography; Materials; Nanowires; Scanning electron microscopy; nanowire; phase change materials; spacer etch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/NVMTS.2013.6851047
  • Filename
    6851047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=692155