• DocumentCode
    692158
  • Title

    Emerging memories technology landscape

  • Author

    Sandhu, Gurtej S.

  • Author_Institution
    Micron Technol. Inc., Boise, ID, USA
  • fYear
    2013
  • fDate
    12-14 Aug. 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Several flavors of new memory technologies based on alternate state variables are under active research and exploration and this paper provides an overview of the major emerging memory technology developments. The basic mechanisms and concepts driving the most promising technologies, their current development status, and potential opportunities for providing differentiated product solutions are discussed. The review includes discussion of desirable target metrics for a memory chip and some fundamental limitations in performance arising from device physics constraints or materials complexity.
  • Keywords
    DRAM chips; SRAM chips; DRAM; RRAM; SRAM; STMRAM; material complexity; memory technology development; physics constraints; Junctions; Magnetic anisotropy; Magnetic tunneling; Materials; Programming; Random access memory; Switches; Memory Technology; PCM; RRAM; STMRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/NVMTS.2013.6851050
  • Filename
    6851050