DocumentCode
692158
Title
Emerging memories technology landscape
Author
Sandhu, Gurtej S.
Author_Institution
Micron Technol. Inc., Boise, ID, USA
fYear
2013
fDate
12-14 Aug. 2013
Firstpage
1
Lastpage
5
Abstract
Several flavors of new memory technologies based on alternate state variables are under active research and exploration and this paper provides an overview of the major emerging memory technology developments. The basic mechanisms and concepts driving the most promising technologies, their current development status, and potential opportunities for providing differentiated product solutions are discussed. The review includes discussion of desirable target metrics for a memory chip and some fundamental limitations in performance arising from device physics constraints or materials complexity.
Keywords
DRAM chips; SRAM chips; DRAM; RRAM; SRAM; STMRAM; material complexity; memory technology development; physics constraints; Junctions; Magnetic anisotropy; Magnetic tunneling; Materials; Programming; Random access memory; Switches; Memory Technology; PCM; RRAM; STMRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/NVMTS.2013.6851050
Filename
6851050
Link To Document