• DocumentCode
    692160
  • Title

    Investigation of intermediate dielectric for dual floating gate MOSFET

  • Author

    Sarkar, B. ; Jayanti, Srikant ; Di Spigna, Neil ; Bongmook Lee ; Misra, Vishal ; Franzon, P.

  • Author_Institution
    Dept. of Electr. Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    2013
  • fDate
    12-14 Aug. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A dual floating gate transistor offers potential as a unified memory, with simultaneous volatile and non-volatile storage. The quality of the dielectric between the two floating gates is critical to achieving the required dynamic cycle endurance. This paper reports on the results of early experiments into the material choice and process for this dielectric.
  • Keywords
    DRAM chips; MOSFET; dielectric materials; DRAM; dual floating gate MOSFET; dual floating gate memory; dynamic cycle endurance; intermediate dielectric; Dielectrics; Flash memories; Hafnium compounds; Logic gates; MOS capacitors; Nonvolatile memory; Transistors; DRAM; EOT; MIM; endurance; flash memory; floating gate; retention;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/NVMTS.2013.6851052
  • Filename
    6851052
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=692160