DocumentCode
692525
Title
Efficient TSV repair method for 3D memories
Author
Ilwoong Kim ; Keewon Cho ; Sungho Kang
Author_Institution
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear
2013
fDate
17-19 Nov. 2013
Abstract
Through-silicon-via (TSV) based 3D stacked memory is recognized as the next generation memory architecture but its low TSV yield is one of the manufacturing cost factors. In this paper, an efficient TSV repair method is proposed for 3D memories. The proposed method uses a new 2-dimensional 1-4 switching technique to enable efficient repair of clustered TSV faults using repair circuitry with reasonable area overhead. Therefore, the proposed TSV repair method can contribute the improvement of TSV yield for 3D memories.
Keywords
failure analysis; integrated circuit reliability; integrated memory circuits; three-dimensional integrated circuits; 2-dimensional 1-4 switching technique; TSV yield improvement; TSV-based 3D stacked memory; area overhead; clustered TSV faults; efficient TSV repair method; manufacturing cost factors; next generation memory architecture; repair circuitry; through-silicon-via; Arrays; Circuit faults; Maintenance engineering; Switches; Switching circuits; Three-dimensional displays; Through-silicon vias; 3D memory; TSV repair; clustered TSV faults;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2013 International
Conference_Location
Busan
Type
conf
DOI
10.1109/ISOCC.2013.6863974
Filename
6863974
Link To Document