Title :
A comparison of high-frequency 32-bit dynamic adders with conventional silicon and novel carbon nanotube transistor technologies
Author :
Yanan Sun ; Kursun, V.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The performances of high-frequency two-stage pipeline 32-bit carry lookahead adders are evaluated in this paper with the following three different implementations: silicon MOSFET (Si-MOSFET) domino logic, Si-MOSFET NP dynamic CMOS, and carbon nanotube MOSFET (CN-MOSFET) NP dynamic CMOS. While providing similar propagation delay, the total area of CN-MOSFET NP dynamic CMOS adder is reduced by 35.53% and 77.96% as compared to the conventional Si-MOSFET domino and Si-MOSFET NP dynamic CMOS adders, respectively. Miniaturization of the CN-MOSFET NP dynamic CMOS circuit reduces the dynamic switching power consumption by 80.54% and 95.57% as compared to the Si-MOSFET domino and Si-MOSFET NP dynamic CMOS circuits, respectively. Furthermore, the CN-MOSFET NP dynamic CMOS adder provides up to 99.98% savings in leakage power consumption as compared to the silicon circuits that are evaluated in this study.
Keywords :
CMOS logic circuits; MOSFET circuits; adders; carbon nanotube field effect transistors; NP dynamic CMOS technology; carbon nanotube MOSFET; carbon nanotube transistor technology; carry lookahead adder; domino logic; high frequency dynamic adder; propagation delay; word length 32 bit; Adders; CMOS integrated circuits; CMOS technology; Carbon nanotubes; Logic gates; Propagation delay; Transistors; Dynamic logic; carbon nanotube transistor technology; electron mobility; high performance; hole mobility; low power;
Conference_Titel :
SoC Design Conference (ISOCC), 2013 International
Conference_Location :
Busan
DOI :
10.1109/ISOCC.2013.6863980
