A CMOS low-voltage reference based on body effect and switched-capacitor technique

A low power CMOS voltage reference using body effect and switched-capacitor technique is presented in this paper. The output voltage is produced by the gate-source voltage. The MOSFETs are working on subthreshold region thus the power consumption is greatly reduced. By utilizing the switched-capacitor technique, only one transistor is required to generate the reference voltage, so that the threshold voltage mismatch in conventional two-transistor configuration is eliminated. The proposed circuit is designed and simulated under 0.18-μm CMOS technology. The output voltage is 117.68 mV, and the temperature coefficient is less than 50.0 ppm/°C ranging from -40 °C to 80 °C. The voltage line-sensitivity is 0.19 %/V ranging from 1.2 V to 3.2 V. The average current consumption is about 95 nA.