• DocumentCode
    69260
  • Title

    Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors

  • Author

    Kai Ding ; Chengyan Wang ; Bintian Zhang ; Yang Zhang ; Min Guan ; Lijie Cui ; Yuwei Zhang ; Yiping Zeng ; Zhang Lin ; Feng Huang

  • Author_Institution
    Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China
  • Volume
    35
  • Issue
    3
  • fYear
    2014
  • fDate
    Mar-14
  • Firstpage
    333
  • Lastpage
    335
  • Abstract
    Alpha-fetoprotein (AFP) is a typical tumor marker in early diagnosis. Highly specific detection of the AFP was demonstrated using AlGaAs/GaAs high electron mobility transistors (HEMTs). Anti-AFP antibody was immobilized to the Au-coated gate area of the HEMT by a covalent modification method. To avoid any nonspecific binding, the gate was blocked by bovine serum albumin after the reduction of the carbonyl group. A detection limit for the AFP as low as a few picograms/milliliter was achieved, and cross reactivity of the sensor was found negligible, demonstrating its high selectivity. Successful detection with minute quantity of the sample indicates that the sensor has great potential in practical screening for a wide population.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gold; high electron mobility transistors; proteins; tumours; AlGaAs-GaAs; Au; Au-coated gate area; HEMT; alpha-fetoprotein; anti-AFP antibody; bovine serum albumin; carbonyl group reduction; covalent modification; diagnosis; high electron mobility transistors; sensor cross reactivity; specific detection; tumor marker; Aluminum gallium nitride; Cancer; Gallium arsenide; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaAs/GaAs; HEMT; biosensor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2298397
  • Filename
    6717181