Fluorinated Graphene FETs Controlled by Ionic Liquid Gate

Author

Furuyama, S. ; Tahara, K. ; Iwasaki, Takuya ; Matsutani, Akihiro ; Hatano, M.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

Volume

10

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

962

Lastpage

965

Abstract

Fluorinated graphene field effect transistors (FETs) with an ionic liquid (IL) top-gate are demonstrated. Fluorinated graphene functionalized with different fluorine concentrations were prepared. Highly fluorinated graphene FETs controlled by ionic liquid gating (ILG) exhibited higher on/off ratios than pristine (non-fluorinated) graphene FET, while conventional back gating (BG) configuration resulted in lower on/off ratios. ILG can induce high charge density in fluorinated graphene with localized states because of extremely high electric field effect of an electric double layer between IL and fluorinated graphene. Thus, a higher on/off ratio was obtained by the combination of graphene fluorination and ILG.

Keywords

electric field effects; field effect transistors; graphene; IL top-gate; ILG combination; conventional BG configuration; conventional back gating configuration; electric double layer; fluorinated graphene FET; fluorinated graphene field effect transistors; fluorine concentration; graphene fluorination combination; high-charge density; high-electric field effect; ionic liquid gating; ionic liquid top gate; localized states; on-off ratio; pristine graphene FET; Atomic layer deposition; Carbon; Conductivity; Field effect transistors; Graphene; Liquids; Logic gates; Fluorination; graphene; ionic liquid (IL);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2332636

Filename

6843871