• DocumentCode
    697695
  • Title

    A high performance FBSOA tester for bipolar transistors with extended SOA

  • Author

    Lorenz, L. ; Reinmuth, K.

  • Author_Institution
    Siemens, Power Semiconductor Division Frankfurter Ring 152, 8000 München 46
  • fYear
    1987
  • fDate
    21-26 June 1987
  • Firstpage
    90
  • Lastpage
    98
  • Abstract
    This paper presents a non-destructive testing method for bipolar transistors and, in particular, for very rapid bipolar transistors such as the SIRET. The SIRET is a bipolar transistor with very short switching and storage times and, due to the extremely short emitter widths, has an extended SOA range. This work also discusses the limit load curves (FBSOA, FBAOA, RBSOA) of conventional bipolar transistors and of the SIRET. In particular, this paper examines why the FBSOA range is of particular importance for transistors with very short turn-on times. Finally, it will examine the requirements demanded of the test equipment and will discuss test results obtained.
  • Keywords
    Bipolar transistors; Current measurement; Electric breakdown; Power dissipation; Semiconductor optical amplifiers; Switching circuits; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1987 IEEE
  • Conference_Location
    Blacksburg, VA, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1987.7077169
  • Filename
    7077169