A Five-Parameter Model of the AlGaN/GaN HFET

Author

Bilbro, Griff L. ; Trew, Robert J.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

62

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

1157

Lastpage

1162

Abstract

We introduce an analytic expression for the drain current $I_{d}(V_{\\rm gs},V_{\\rm ds})$ of an AlGaN/GaN heterojunction field-effect transistor (HFET) as a function of its gate and drain voltages. We derive the function from a compact physical model of conduction current in the HFET. The proposed expression for the current is configured by five parameters, which can be expressed in terms of the geometry and materials of a device. We extend the model to small-signal RF operation by embedding it in a 12-parameter $RLC$ network that represents terminal feed impedances and device parasitics. We adjust the parameters of the extended model to simultaneously fit dc and RF measurements of an industrial transistor.

Keywords

III-V semiconductors; RLC circuits; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 12-parameter RLC network; AlGaN-GaN; AlGaN-GaN heterojunction field-effect transistor; HFET; RF measurements; compact physical model; conduction current; dc measurements; device parasitics; drain current; drain voltages; gate voltages; industrial transistor; small-signal RF operation; terminal feed impedances; Aluminum gallium nitride; Equations; Gallium nitride; HEMTs; Logic gates; MODFETs; Mathematical model; AlGaN/GaN; HEMT; RF; RF.; analytic; compact model; continuously differentiable; dc; heterojunction field-effect transistor (HFET); physical; physics based;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2394376

Filename

7042928