• DocumentCode
    69911
  • Title

    Analysis and design of monolithic resistors with a desired temperature coefficient using contacts

  • Author

    Sadeghi, Nader ; Sadeghi, Iman ; Mirabbasi, Shahriar

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
  • Volume
    7
  • Issue
    4
  • fYear
    2013
  • fDate
    Jul-13
  • Firstpage
    185
  • Lastpage
    192
  • Abstract
    A technique for implementing monolithic resistors with a desired temperature coefficient (TC) over a wide temperature range is introduced. A typical monolithic resistor consists of a core resistive layer terminated with contact layers on each end. In a typical process, there are core resistive layers that have TCs with opposite sign of that of the contacts. The authors propose to take advantage of this property and distribute a certain number of contacts across the core resistor to achieve a desired overall TC for monolithic resistors. This TC can be negative, zero or positive. The methodologies for designing such resistors are presented. As a proof-of-concept, several resistor structures have been designed and implemented in a 0.13 μm complementary metal-oxide semiconductor technology. The simulation and measurement results over the temperature range of 25-200°C confirm the validity of the proposed technique.
  • Keywords
    CMOS integrated circuits; electrical contacts; resistors; complementary metal-oxide semiconductor technology; contact layers; core resistive layer; monolithic resistor design; resistor structures; size 0.13 mum; temperature 25 degC to 200 degC; temperature coefficient;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2012.0126
  • Filename
    6574684