6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

Author

Yun-Hsiang Wang ; Liang, Yung C. ; Samudra, Ganesh S. ; Huolin Huang ; Bo-Jhang Huang ; Szu-Han Huang ; Ting-Fu Chang ; Chih-Fang Huang ; Wei-Hung Kuo ; Guo-Qiang Lo

Author_Institution

Nat. Univ. of Singapore, Singapore, Singapore

Volume

36

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

381

Lastpage

383

Abstract

In this letter, the approach of partial AlGaN recess and multiple layers of fluorinated Al₂O₃ gate dielectric is utilized to achieve highest reported positive gate threshold voltage (V_TH) without severe reduction on 2-D electron gas carrier mobility in AlGaN/GaN HEMTs. Guided by the design and verification through analytical model, proper fluorine ions incorporation is made through fabrication. The approach resulted in a high V_TH of +6.5 V and competitive drain saturation current (I_DMAX) of 340 mA/mm. Furthermore, low gate leakage current and high breakdown voltage of 1140 V were also demonstrated.

Keywords

III-V semiconductors; MISFET; aluminium compounds; carrier mobility; dielectric devices; dielectric materials; electric breakdown; gallium compounds; leakage currents; power HEMT; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas carrier mobility; AlGaN-GaN; HEMT; breakdown voltage; drain saturation current; fluorine ion incorporation; high electron mobility transistor; low gate leakage current; multilayer fluorinated gate dielectric stack; positive gate threshold voltage power metal-insulator-semiconductor; voltage 1140 V; voltage 6.5 V; Aluminum gallium nitride; Aluminum oxide; Gallium nitride; HEMTs; Logic gates; MODFETs; Threshold voltage; AlGaN/GaN HEMTs; fluorine plasma treatment; gate trench; normally-off;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2401736

Filename

7044577