• DocumentCode
    702248
  • Title

    Stack based sense amplifier designs for reducing input-referred offset

  • Author

    Boley, James ; Calhoun, Benton

  • Author_Institution
    Univ. of Virginia, Charlottesville, VA, USA
  • fYear
    2015
  • fDate
    2-4 March 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The design of high performance SRAM in scaled technology nodes has become challenging due to an increase in both variation and leakage. The sense amplifier is one component that is particularly sensitive to threshold voltage variation due to its symmetrical design. Reducing the intrinsic input-referred offset of the sense amp reduces the bitline development time, which improves both energy and delay. In this paper we present a source coupled scheme that requires no area overhead and reduces the standard deviation of offset (σOFFSET) by up to 19%. In addition we present three novel sense amp designs that offer up to a 48% reduction in offset at iso-area compared to a traditional latch-based design.
  • Keywords
    SRAM chips; amplifiers; flip-flops; integrated circuit design; SRAM; latch-based design; reducing input-referred offset; stack based sense amplifier designs; standard deviation; symmetrical design; threshold voltage variation; Delays; Inverters; Latches; MOS devices; Random access memory; Robustness; Topology; Robust SRAM sense amplifiers; high performance SRAM; variation tolerance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2015 16th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4799-7580-8
  • Type

    conf

  • DOI
    10.1109/ISQED.2015.7085369
  • Filename
    7085369