DocumentCode
702248
Title
Stack based sense amplifier designs for reducing input-referred offset
Author
Boley, James ; Calhoun, Benton
Author_Institution
Univ. of Virginia, Charlottesville, VA, USA
fYear
2015
fDate
2-4 March 2015
Firstpage
1
Lastpage
4
Abstract
The design of high performance SRAM in scaled technology nodes has become challenging due to an increase in both variation and leakage. The sense amplifier is one component that is particularly sensitive to threshold voltage variation due to its symmetrical design. Reducing the intrinsic input-referred offset of the sense amp reduces the bitline development time, which improves both energy and delay. In this paper we present a source coupled scheme that requires no area overhead and reduces the standard deviation of offset (σOFFSET) by up to 19%. In addition we present three novel sense amp designs that offer up to a 48% reduction in offset at iso-area compared to a traditional latch-based design.
Keywords
SRAM chips; amplifiers; flip-flops; integrated circuit design; SRAM; latch-based design; reducing input-referred offset; stack based sense amplifier designs; standard deviation; symmetrical design; threshold voltage variation; Delays; Inverters; Latches; MOS devices; Random access memory; Robustness; Topology; Robust SRAM sense amplifiers; high performance SRAM; variation tolerance;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4799-7580-8
Type
conf
DOI
10.1109/ISQED.2015.7085369
Filename
7085369
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