Title :
A digitally-controlled power-aware low-dropout regulator to reduce standby current drain in ultra-low-power MCU
Author :
Mazumdar, Kaushik ; Bartling, Steven ; Khanna, Sudhanshu ; Stan, Mircea
Author_Institution :
Univ. of Virginia, Charlottesville, VA, USA
Abstract :
In this paper, we describe a fully-integrated digitally-controlled low-dropout regulator (LDO) with dual-loop architecture, providing core voltage to an ultra-low-power microcontroller (MCU). The fine-grained loop dynamically modulates the active-mode LDO drive-strength using the MCU power-modes information for a maximum load current of 6mA, thereby improving the active-mode current efficiency. The coarse-grained loop, enabled to regulate the output voltage only when the MCU enters the standby-mode, ensures ultra-low quiescent current consumption of 500nA, preventing standby drain. A thermometric binary-weighted power-switch matrix improves the transient response figure-of-merit (FOM) by switching between the different power modes. A charge-pump based voltage monitoring circuit is added to allow for wider input voltage range with reduced ripple. Fast digitally-controlled transient response of the LDO allowed the replacement of the (usually off-chip) large capacitor with a high-density on-chip ferroelectric capacitor, thus reducing the LDO sleep-to-active recovery time/energy and allowing full system-on-chip integration. The digitally-controlled LDO, with a wide input voltage range of 1.75-3.3V and nominal output of 1.2V is implemented in a 0.13μm CMOS technology with an active area of 0.034mm2, achieving a FOM of 4.44ps with standby-mode current efficiency of more than 90% for all practical purposes.
Keywords :
CMOS integrated circuits; controllers; low-power electronics; microcontrollers; CMOS; FOM; active-mode current efficiency; charge-pump based voltage monitoring circuit; coarse-grained loop; current 500 nA; current 6 mA; digitally-controlled power-aware low-dropout regulator; figure-of-merit; on-chip ferroelectric capacitor; size 0.13 mum; standby current drain; thermometric binary-weighted power-switch matrix; time 4.44 ps; ultra-low-power MCU; ultra-low-power microcontroller; voltage 1.2 V; voltage 1.75 V to 3.3 V; CMOS integrated circuits; Capacitors; Clocks; Regulators; Switches; Transient response; Voltage control; LDO; MCU; energy-harvesting; standby-mode efficiency;
Conference_Titel :
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-7580-8
DOI :
10.1109/ISQED.2015.7085406