DocumentCode
702279
Title
Optimal choice of FinFET devices for energy minimization in deeply-scaled technologies
Author
Abrishami, Mohammad Saeed ; Shafaei, Alireza ; Yanzhi Wang ; Pedram, Massoud
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fYear
2015
fDate
2-4 March 2015
Firstpage
234
Lastpage
238
Abstract
FinFET devices are considered to be the device substitute for bulk CMOS in sub-20nm technology nodes due to the reduced short-channel effects, improved ON/OFF current ratio, and improved voltage scalability. This paper investigates the problem of optimal selection of deeply-scaled FinFET technology to achieve minimum energy consumption for different applications such as sensor applications, smartphones, embedded micro-processors, or server micro-processors, which differ in the required performance and duty ratio. For each application space, different FinFET technologies (with different Vth and gate length biases) are compared in term of minimum energy consumption for both logic circuits and cache memories. A device-circuit-architecture cross-layer framework has been developed to facilitate this technology selection. This optimal technology selection procedure demonstrates up to 11× energy saving compared to poorly selected technologies.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit design; low-power electronics; FinFET devices; bulk CMOS; cache memories; deeply-scaled technologies; device-circuit-architecture cross-layer framework; embedded microprocessors; logic circuits; sensor applications; server microprocessors; short-channel effects; smartphones; voltage scalability; CMOS integrated circuits; Cache memory; Energy consumption; FinFETs; Integrated circuit modeling; Logic gates; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4799-7580-8
Type
conf
DOI
10.1109/ISQED.2015.7085431
Filename
7085431
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