DocumentCode :
702295
Title :
Fail-safe I/O to control RESET# pin of DDR3 SDRAM and achieve ultra-low system power
Author :
Chauhan, Rajat ; Vyavahare, Prajkta ; Kothamasu, Siva
Author_Institution :
Texas Instrum. (India) Pvt. Ltd., Bangalore, India
fYear :
2015
fDate :
2-4 March 2015
Firstpage :
357
Lastpage :
360
Abstract :
This paper explains a fail-safe I/O circuit to control the RESET# pin of DDR3 SDRAM to achieve ultra-low power system operation. Conventional Fail-safe I/O circuits withstand conditions like hot plug, hot-insertion, hot-swapping and ensure IC reliability by limiting the current flowing into the I/O pin. However they do not guarantee the functionality during supply-ramp cycles where the I/O supply is turned off while its output is pulled high externally. In case of RESET#, a small glitch on I/O pin can reset the DRAM chip. The fail-safe I/O circuit explained in this paper ensures smooth transition between ultra-low power suspension mode, where full chip supply is turned off, and normal operation mode.
Keywords :
DRAM chips; integrated circuit reliability; low-power electronics; DDR3 SDRAM chip supply; IC reliability; RESET# pin control; current flowing limitation; fail-safe I/O circuit; hot plug; hot-insertion; hot-swapping; normal operation mode; smooth transition; supply-ramp cycles; ultralow power suspension mode; ultralow power system operation; Electrostatic discharges; Integrated circuits; Low-power electronics; Resistors; SDRAM; Tablet computers; DDR3; Fail-safe I/O; Hot insertion; Hot swap; SDRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-7580-8
Type :
conf
DOI :
10.1109/ISQED.2015.7085451
Filename :
7085451
Link To Document :
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