Title :
Design and performance parameters of an ultra-low voltage, single supply 32bit processor implemented in 28nm FDSOI technology
Author :
Clerc, S. ; Abouzeid, F. ; Patel, D.A. ; Daveau, J.-M. ; Bottoni, C. ; Ciampolini, L. ; Giner, F. ; Meyer, D. ; Wilson, R. ; Roche, P. ; Naudet, S. ; Virazel, A. ; Bosio, A. ; Girard, P.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This work presents a single-supply SPARC 32b V8 microprocessor designed with Ultra Low Voltage (ULV) adapted standard cells and memories, aiming at low energy operation and stand by power. The microprocessor, equipped with 10 Transistors ULV bitcell 8KB SRAM cache, has been fabricated in Fully Depleted Silicon On Insulator (FDSOI) 28nm technology. A comparative analysis with similar implementations has been provided highlighting the performance gain and power savings that are achieved by our design methodology and implementation technology. Wafer-level tests showed that our ULV adapted microprocessor has an operating range that is functional down to 0.33V and that the ULV able cache can save from 30% to 62% energy.
Keywords :
SRAM chips; cache storage; microprocessor chips; silicon-on-insulator; FDSOI technology; SPARC V8 microprocessor; SRAM cache; fully depleted silicon on insulator technology; low energy operation; size 28 nm; storage capacity 32 bit; storage capacity 8 Kbit; ultralow voltage; wafer-level tests; CMOS integrated circuits; Low voltage; Microprocessors; Registers; Standards; Transistors; Energy efficient Cache; FDSOI; RISC; ULV;
Conference_Titel :
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-7580-8
DOI :
10.1109/ISQED.2015.7085453
