• DocumentCode
    702836
  • Title

    Time-dependent physics of double-tunnel junctions

  • Author

    Talbo, Vincent ; Mateos, Javier ; Retailleau, Sylvie ; Dollfus, Philippe ; Gonzalez, Tomas

  • Author_Institution
    Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, we investigate and explain the time-dependent behavior of shot noise in Silicon quantum dot-based double-tunnel junctions by means of a three-dimensional self-consistent simulation and a Monte-Carlo algorithm following the time evolution of the system. We demonstrate the strong link between autocorrelation functions and electron waiting time distributions, i.e, the time between two consecutive tunnel events through a given junction. Moreover, we separate and analyze the contribution of each different path - evolution of the number of electrons in the quantum dot between two consecutive tunnel events through the same junction - to understand clearly the behavior of auto-correlations and waiting time distributions in the case of a 3-state system.
  • Keywords
    Monte Carlo methods; elemental semiconductors; semiconductor quantum dots; silicon; single electron devices; tunnelling; 3-state system; Monte-Carlo algorithm; autocorrelation functions; autocorrelations; electron waiting time distributions; shot noise; silicon quantum dot-based double-tunnel junctions; time distributions; Correlation; Junctions; Noise; Physics; Quantum dots; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087477
  • Filename
    7087477