• DocumentCode
    70352
  • Title

    Proposing a Numerical Method for Evaluating the Effects of Both Magnetic Properties and Power Semiconductor Properties Under Inverter Excitation

  • Author

    Odawara, Shunya ; FUJISAKI, Keisuke ; Ikeda, Fumiaki

  • Author_Institution
    Toyota Technol. Inst., Nagoya, Japan
  • Volume
    50
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    To evaluate how magnetic properties of magnetic materials are influenced by power semiconductor properties in an inverter circuit, we propose and test a new numerical calculation method. This method combines an electrical circuit analysis for current-voltage properties of power semiconductors with a magnetic analysis based on a magnetic hysteresis model. Previous measurements on an inverter show that magnetic properties, such as B-H curves (B is the magnetic flux density and H is the magnetic field intensity) and iron losses, are affected by ON-voltages of power semiconductors. Those measurements motivate this paper. The magnetic hysteresis model used here is a novel approach that is based on physical thermodynamics theory and can capture the essence of physical magnetic phenomena. Calculations with the proposed method show that measured minor loops in B-H curves are well represented and calculated voltage waveforms properly capture ON-voltage effects.
  • Keywords
    PWM invertors; free energy; magnetic circuits; magnetic flux; magnetic hysteresis; numerical analysis; power semiconductor devices; semiconductor device models; B-H curves; ON-voltage effects; current-voltage properties; electrical circuit analysis; inverter circuit; magnetic field intensity; magnetic flux density; magnetic hysteresis model; magnetic properties; numerical calculation method; physical thermodynamics theory; power semiconductor properties; voltage waveforms; Inverters; Magnetic analysis; Magnetic hysteresis; Magnetic properties; Mathematical model; Semiconductor device measurement; Semiconductor device modeling; Inverter excitation; magnetic property; physical free energy model; semiconductor property;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2014.2327236
  • Filename
    6971526