• DocumentCode
    70375
  • Title

    Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process

  • Author

    Oshita, Takao ; Shor, Joseph ; Duarte, David E. ; Kornfeld, Avner ; Zilberman, Dror

  • Author_Institution
    Intel Corp., Portland, OR, USA
  • Volume
    50
  • Issue
    3
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    799
  • Lastpage
    807
  • Abstract
    Compact thermal sensors (<; 0.02 mm 2 ) are important for measuring thermal gradients in microprocessors and can directly affect the processors performance and power management. In this paper, the first 14 nm thermal sensor is reported. This sensor was fabricated in Intel´s 14 nm process, and is one of the first analog circuits reported in this technology. It has an area of 0.0087 mm 2 , can sense at a speed > 50 kS/sec, consumes 1.1 mW with a resolution of 0.5 °C, and has a resolution FOM of 5.7 nJ * C 2 . It is very close to the present BJT sensor state-of-the-art in its size, while being much faster and having a much better FOM than any of the compact BJT sensors.
  • Keywords
    CMOS analogue integrated circuits; bipolar transistor circuits; microprocessor chips; temperature sensors; analog circuits; compact BJT-based thermal sensor; microprocessors; power 1.1 mW; power management; resolution FOM; size 14 nm; temperature 0.5 degC; thermal gradient measurement; tri-gate CMOS process; Modulation; Noise; Resistors; Temperature measurement; Temperature sensors; Transistors; Analog; microprocessors; thermal sensor;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2015.2396522
  • Filename
    7044613