DocumentCode
70375
Title
Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process
Author
Oshita, Takao ; Shor, Joseph ; Duarte, David E. ; Kornfeld, Avner ; Zilberman, Dror
Author_Institution
Intel Corp., Portland, OR, USA
Volume
50
Issue
3
fYear
2015
fDate
Mar-15
Firstpage
799
Lastpage
807
Abstract
Compact thermal sensors (<; 0.02 mm 2 ) are important for measuring thermal gradients in microprocessors and can directly affect the processors performance and power management. In this paper, the first 14 nm thermal sensor is reported. This sensor was fabricated in Intel´s 14 nm process, and is one of the first analog circuits reported in this technology. It has an area of 0.0087 mm 2 , can sense at a speed > 50 kS/sec, consumes 1.1 mW with a resolution of 0.5 °C, and has a resolution FOM of 5.7 nJ * C 2 . It is very close to the present BJT sensor state-of-the-art in its size, while being much faster and having a much better FOM than any of the compact BJT sensors.
Keywords
CMOS analogue integrated circuits; bipolar transistor circuits; microprocessor chips; temperature sensors; analog circuits; compact BJT-based thermal sensor; microprocessors; power 1.1 mW; power management; resolution FOM; size 14 nm; temperature 0.5 degC; thermal gradient measurement; tri-gate CMOS process; Modulation; Noise; Resistors; Temperature measurement; Temperature sensors; Transistors; Analog; microprocessors; thermal sensor;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2015.2396522
Filename
7044613
Link To Document