Abstract :
Spin-transfer torque magnetic random access memory (STT-MRAM) is an emerging memory technology that possesses a unique combination of density, speed, endurance, and non-volatility. This presentation will focus on materials research and development that has enabled the MRAM technology to advance in recent years, as well as the materials challenges that the technology is facing today. The talk will begin with an overview of the STT MRAM technology and introduction to the basic building blocks of a STT MRAM device. This will be followed with a summary of the MRAM activities carried out at IBM, with an emphasis on materials innovation and device performance. At the end of the talk, a view on the materials challenges to meet the requirements for STT MRAM as DRAM replacement, including retention, read and write operations will be presented.
