• DocumentCode
    704353
  • Title

    Salicidation Processes and CoSi2 Resistance Study

  • Author

    Lifang Xu ; Shafi, Alan ; Meldrim, Mark ; Zengtao Liu ; Yudong Kim ; Rangaraju, Nikhil

  • Author_Institution
    Micron Technol., Boise, ID, USA
  • fYear
    2015
  • fDate
    20-20 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The effect of multiple Si processes on the intrinsic sheet resistance of CoSi2 resistors is investigated in this article. It is discovered that CoSi2 intrinsic sheet resistance is not a simple function of the CoSi thickness, but rather depends on many other factors including CD related poly grain size, the mushroom effect, diffusion of As implant during silicidation anneal, and the existence of Ti-Under layer. The findings of this study provided an accurate and stable resistance control on Silicided poly resistor applications.
  • Keywords
    annealing; cobalt compounds; diffusion; electrical resistivity; grain size; ion implantation; resistors; semiconductor materials; semiconductor thin films; CoSi2; annealing; diffusion; intrinsic sheet resistance; mushroom effect; polygrain size; salicidation processes; titanium-underlayer; Annealing; Films; Implants; Resistance; Resistors; Silicides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices (WMED), 2015 IEEE Workshop on
  • Conference_Location
    Boise, ID
  • ISSN
    1947-3834
  • Print_ISBN
    978-1-4799-7644-7
  • Type

    conf

  • DOI
    10.1109/WMED.2015.7093687
  • Filename
    7093687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=704353