Sensor matrix array for image processing in visual cortex

Author

Matsui, Yu-ichi

Author_Institution

Collaborative Res. Center, Univ. of Shiga Prefecture, Hikone, Japan

fYear

2007

fDate

3-7 Sept. 2007

Firstpage

1676

Lastpage

1680

Abstract

A simple architecture of image processing has been developed to imitate the functions of the higher level visual cortex by using the new optoelectronic sensor. This sensor has the characteristics approximated by DOG (difference of Gaussian) functions. The characteristics are due to the negative photoinduced current (PIC) and the negative differential (ND) characteristics according to the forward bias voltage, which have been effectively obtained just for layer structures with a charge-storage layer of InAs/GaAs short period superlattice (SSL). By the simple matrix array using the sensor, the functions of selectivity to orientation angle, motion- direction and length of slit light in visual cortex have been imitated successfully.

Keywords

III-V semiconductors; gallium arsenide; image processing; image sensors; indium compounds; semiconductor superlattices; sensor arrays; InAs-GaAs; charge storage layer; difference of Gaussian functions; forward bias voltage negative differential characteristics; image processing; negative photoinduced current; optoelectronic sensor; sensor matrix array; short period superlattice; visual cortex; Arrays; Electrodes; Europe; Gallium arsenide; Schottky barriers; Signal processing; Visualization;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Processing Conference, 2007 15th European

Conference_Location

Poznan

Print_ISBN

978-839-2134-04-6

Type

conf

Filename

7099092