The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship

Author

Hong Yao Long ; Sweet, Mark R. ; De Souza, Maria Merlyne ; Narayanan, Ekkanath Madathil Sankara

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Sheffield, Sheffield, UK

fYear

2015

fDate

15-19 March 2015

Firstpage

1266

Lastpage

1269

Abstract

In this paper, the characteristics of the next generation of 1200V Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) in Non Punch Through (NPT) technology, made under manufacturing conditions are presented for the first time. The techniques applied to this novel power device are high density of MOS cells in a ladder design with fine pattern process. The device structure and process are optimized to provide the best trade-off between energy losses and ruggedness for industrial power applications.

Keywords

insulated gate bipolar transistors; ladder networks; power MOSFET; power bipolar transistors; MOS cell; NPT technology; TCIGBT; energy loss; fine pattern process; improved trade-off relationship; industrial power application; ladder design; next generation trench clustered IGBT technology; nonpunch through technology; power device; voltage 1200 V; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Semiconductor device measurement; Temperature; Temperature measurement; Thyristors; 1200V CIGBT; IGBT; Vce(sat)-Eoff trade-off relationship; fine pattern process;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104510

Filename

7104510