A high-frequency resonant gate driver for enhancement-mode GaN power devices

A novel resonant gate driver designed for the high-frequency enhancement-mode GaN HEMT power devices is proposed in this work. Simulation results indicate that it reduces gate driving loss more than 50% compared to the conventional non-resonant gate driving topology, and by 20% compared to the existing GaN resonant gate driver. The loss reduction is achieved by partially recovering gate charge to the supply during charging and discharging through a resonant process using an inductance in the gate loop. The resonant condition is managed using the desired turn-on and turn-off driving pulses at the input with specific driving time and pulse width control. These inputs also generate on-chip control signals for safely clamping the GaN power devices during the remaining switching cycle after the resonant transition has concluded. Simulations reveal improved switching waveforms using the proposed gate driver compared to the existing GaN resonant gate driving topologies.