DocumentCode :
708379
Title :
A high-frequency resonant gate driver for enhancement-mode GaN power devices
Author :
Yu Long ; Weimin Zhang ; Costinett, Daniel ; Blalock, Benjamin B. ; Jenkins, Luke L.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
fYear :
2015
fDate :
15-19 March 2015
Firstpage :
1961
Lastpage :
1965
Abstract :
A novel resonant gate driver designed for the high-frequency enhancement-mode GaN HEMT power devices is proposed in this work. Simulation results indicate that it reduces gate driving loss more than 50% compared to the conventional non-resonant gate driving topology, and by 20% compared to the existing GaN resonant gate driver. The loss reduction is achieved by partially recovering gate charge to the supply during charging and discharging through a resonant process using an inductance in the gate loop. The resonant condition is managed using the desired turn-on and turn-off driving pulses at the input with specific driving time and pulse width control. These inputs also generate on-chip control signals for safely clamping the GaN power devices during the remaining switching cycle after the resonant transition has concluded. Simulations reveal improved switching waveforms using the proposed gate driver compared to the existing GaN resonant gate driving topologies.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; power HEMT; wide band gap semiconductors; GaN; gate driving loss reduction; gate loop; high-frequency enhancement-mode HEMT power devices; high-frequency resonant gate driver; nonresonant gate driving topology; on-chip control signals; pulse width control; resonant gate driving topology; resonant process; resonant transition; switching waveforms; Gallium nitride; Logic gates; Manganese; Power supplies; Resonant frequency; Switches; Topology; GaN HEMT; gate driver; resonant gate driver;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
Type :
conf
DOI :
10.1109/APEC.2015.7104616
Filename :
7104616
Link To Document :
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