• DocumentCode
    708382
  • Title

    A new family of GaN transistors for highly efficient high frequency DC-DC converters

  • Author

    Reusch, David ; Strydom, Johan ; Lidow, Alex

  • Author_Institution
    Efficient Power Conversion Corp., El Segundo, CA, USA
  • fYear
    2015
  • fDate
    15-19 March 2015
  • Firstpage
    1979
  • Lastpage
    1985
  • Abstract
    In this paper we will discuss the latest developments in DC-DC converters, including major improvements in eGaN® FETs with the latest generation devices and the introduction of a new family of monolithic half bridge ICs offering unmatched high frequency performance. The new family of eGaN FETs is keeping Moore´s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion.
  • Keywords
    DC-DC power convertors; III-V semiconductors; gallium compounds; monolithic integrated circuits; power MOSFET; wide band gap semiconductors; DC-DC converters; GaN; Moore´s Law; eGaN FET; figures of merit; high frequency power conversion; monolithic half bridge IC; power MOSFET; transistors; Capacitance; Gallium nitride; Logic gates; MOSFET; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
  • Conference_Location
    Charlotte, NC
  • Type

    conf

  • DOI
    10.1109/APEC.2015.7104619
  • Filename
    7104619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=708382