Title :
A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density
Author :
Suzuki, Tsuyoshi ; Anchlia, Ankur ; Cherman, Vladimir ; Oishi, Hidetoshi ; Mori, Shigetaka ; Ryckaert, Julien ; Ogawa, Kazuhisa ; Van der Plas, Geert ; Beyne, Eric ; Fukuzaki, Yuzo ; Verkest, Diederik ; Ohnuma, Hidetoshi
Author_Institution :
Sony Corp., Atsugi, Japan
Abstract :
We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm “feedback looped biasing” with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.
Keywords :
MOSFET; electric current measurement; semiconductor device measurement; semiconductor device testing; Ioff-Ion; IR drop; Ioff-Ion; Kelvin probe structure; MOSFET array structure; feedback looped biasing; high accuracy measurement; leakage contamination; scribe line; size 28 nm; Arrays; CMOS integrated circuits; MOSFET; MOSFET circuits; Monitoring; Pollution measurement; Switching circuits;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106095
