A simple method for characterization of MOSFET serial resistance asymmetry

Author

Tomaszewski, Daniel ; Gluszko, Grzegorz ; Malesinska, Jolanta ; Domanski, Krzysztof ; Zaborowski, Michal ; Kucharski, Krzysztof ; Szmigiel, Dariusz ; Sierakowski, Andrzej

Author_Institution

Inst. Technol. Elektron. (ITE), Warsaw, Poland

fYear

2015

fDate

23-26 March 2015

Firstpage

116

Lastpage

121

Abstract

A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I-V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I-V characteristics. Based on the measurement data determined for the SOI MOSFETs fabricated in ITE the proposed method has been compared with other techniques.

Keywords

MOSFET; electric resistance measurement; electrodes; elemental semiconductors; semiconductor device measurement; silicon-on-insulator; I-V device characteristics; MOSFET serial resistance asymmetry; SOl MOSFET; Si; saturation range modeling; source-drain electrodes; threshold voltage; Feature extraction; Logic gates; MOSFET; MOSFET circuits; Resistance; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2015 International Conference on

Conference_Location

Tempe, AZ

ISSN

1071-9032

Print_ISBN

978-1-4799-8302-5

Type

conf

DOI

10.1109/ICMTS.2015.7106120

Filename

7106120