Title :
A simple method for characterization of MOSFET serial resistance asymmetry
Author :
Tomaszewski, Daniel ; Gluszko, Grzegorz ; Malesinska, Jolanta ; Domanski, Krzysztof ; Zaborowski, Michal ; Kucharski, Krzysztof ; Szmigiel, Dariusz ; Sierakowski, Andrzej
Author_Institution :
Inst. Technol. Elektron. (ITE), Warsaw, Poland
Abstract :
A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I-V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I-V characteristics. Based on the measurement data determined for the SOI MOSFETs fabricated in ITE the proposed method has been compared with other techniques.
Keywords :
MOSFET; electric resistance measurement; electrodes; elemental semiconductors; semiconductor device measurement; silicon-on-insulator; I-V device characteristics; MOSFET serial resistance asymmetry; SOl MOSFET; Si; saturation range modeling; source-drain electrodes; threshold voltage; Feature extraction; Logic gates; MOSFET; MOSFET circuits; Resistance; Silicon; Substrates;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106120
