DocumentCode
708659
Title
Characterization of recessed Ohmic contacts to AlGaN/GaN
Author
Hajlasz, M. ; Donkers, J.J.T.M. ; Sque, S.J. ; Heil, S.B.S. ; Gravesteijn, D.J. ; Rietveld, F.J.R. ; Schmitz, J.
Author_Institution
Mater. Innovation Inst. (M2i), Delft, Netherlands
fYear
2015
fDate
23-26 March 2015
Firstpage
158
Lastpage
162
Abstract
In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.
Keywords
III-V semiconductors; aluminium; aluminium compounds; contact resistance; gallium compounds; ohmic contacts; semiconductor heterojunctions; semiconductor-metal boundaries; titanium; wide band gap semiconductors; AlGaN-GaN-Ti-Al; characterization methods; identical sheet resistance; recessed Ohmic contacts; specific contact resistance; test structures; Aluminum gallium nitride; Annealing; Gallium nitride; Resistance; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location
Tempe, AZ
ISSN
1071-9032
Print_ISBN
978-1-4799-8302-5
Type
conf
DOI
10.1109/ICMTS.2015.7106133
Filename
7106133
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