Title :
Sheet resistance measurement for process monitoring of 400 °C PureB deposition on Si
Author :
Lin Qi ; Nanver, Lis K.
Author_Institution :
Delft Univ. of Technol.Delft, Delft, Netherlands
Abstract :
Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.
Keywords :
electric resistance measurement; elemental semiconductors; photodiodes; silicon; PureB deposition; Si; photodiode; process monitoring; pure boron deposition; sheet resistance measurement; sheet-resistance test-structure; temperature 400 degC; Atmospheric measurements; Monitoring; Particle measurements; Performance evaluation; Pollution measurement; Process control; Silicon;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106135
