High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology

Author

Ali, U. ; Bober, M. ; Thiede, A. ; Awny, A. ; Fischer, G.

Author_Institution

Univ. of Paderborn, Paderborn, Germany

fYear

2015

fDate

16-18 March 2015

Firstpage

241

Lastpage

243

Abstract

A speed optimization scheme for static frequency dividers based on master-slave flip-flops is presented. As a proof of the concept, the design of a divide by two static frequency divider in 0.13 μm SiGe BiCMOS technology (with f_t gt; 300 GHz and f_max gt; 450 GHz) is reported. The circuit exhibits the highest self-oscillation frequency (SOF) of 111.6 GHz among the existing SiGe technology based static frequency dividers. With singleended sine wave clock input, divider is operational from 6 to 128.7 GHz (limited by measurement equipment). At dual power supply with V_cc = 3 V and V_ee = -1.9 V, the circuit consumes 40 mA per latch.

Keywords

BiCMOS logic circuits; Ge-Si alloys; circuit optimisation; field effect MIMIC; flip-flops; frequency dividers; millimetre wave frequency convertors; BiCMOS technology; SiGe; current 40 mA; frequency 6 GHz to 128.7 GHz; master-slave flip-flops; self-oscillation frequency; single-ended sine wave clock input; size 0.13 mum; speed optimization scheme; static frequency divider; voltage 1.9 V; voltage 3 V; Capacitance; Frequency conversion; Frequency measurement; Latches; Metals; Probes; Silicon germanium; HBT; SiGe; latch; static frequency dividers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (GeMiC), 2015 German

Conference_Location

Nuremberg

Type

conf

DOI

10.1109/GEMIC.2015.7107798

Filename

7107798