Influence of atmospheric-pressure plasma treatment on surface and electrical properties of photodiode chips

Author

Ikeda, So ; Higurashi, Eiji ; Suga, Tadatomo

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2015

fDate

14-17 April 2015

Firstpage

666

Lastpage

669

Abstract

Atmospheric pressure (AP) plasma has been used for the surface activation of gold (Au) prior to low temperature Au-Au bonding. In this paper, flip-chip type Indium Gallium Arsenide (InGaAs) photodiode (PD) chips were treated by AP plasma jets. The plasma treatment was performed with two different mixed gases (Ar+O₂ and Ar+H₂). Degradation of PD chips under AP plasma irradiations was investigated through current-voltage (I-V) measurements performed under dark condition at room temperature. The results show that dark current of PD chips was increased after Ar+O₂ AP plasma treatment and significantly improved after subsequent Ar+H₂ AP plasma treatment.

Keywords

III-V semiconductors; bonding processes; flip-chip devices; gallium arsenide; gold compounds; indium compounds; photodiodes; Au-Au; InGaAs; atmospheric-pressure plasma treatment; current-voltage measurements; electrical properties; flip-chip type photodiode; low temperature bonding; photodiode chips; plasma jets; surface activation; Bonding; Dark current; Gold; Plasma temperature; Radiation effects; Surface treatment; atmospheric-pressure plasma; dark current; photodiode; surface activated bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on

Conference_Location

Kyoto

Print_ISBN

978-4-9040-9012-1

Type

conf

DOI

10.1109/ICEP-IAAC.2015.7111097

Filename

7111097