Heat dissipation characterization and application of SiC power devices by transient thermal measurement

Author

Endoh, Ryo ; Watanabe, Junichi ; Sugie, Ryuichi ; Yamamoto, Takashi

Author_Institution

Toray Res. Center Inc., Otsu, Japan

fYear

2015

fDate

14-17 April 2015

Firstpage

822

Lastpage

825

Abstract

In this study, we carry out the heat shock test to the SiC MOSFET, and the thermal resistance change before and after the test were measured by transient thermal measurement. It was confirmed that the thermal resistance of the solder layer has increased after the test. From the results of the cross-sectional SEM observation, we found that delamination occurs in the interface of the solder layer and the chip. It was identified as the cause of increased thermal resistance.

Keywords

cooling; power MOSFET; scanning electron microscopy; silicon compounds; solders; thermal resistance; MOSFET; SiC; cross-sectional SEM observation; heat dissipation characterization; heat shock test; power devices; solder layer; thermal resistance; transient thermal measurement; Electric shock; Electrical resistance measurement; Heating; Semiconductor device measurement; Temperature measurement; Thermal resistance; MOSFET; Power device; SiC; Thermal capacitance; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on

Conference_Location

Kyoto

Print_ISBN

978-4-9040-9012-1

Type

conf

DOI

10.1109/ICEP-IAAC.2015.7111125

Filename

7111125