Time-integrated photon emission as a function of temperature in 32 nm CMOS

This work presents a study of the effect of chip temperature on Photon Emission Microscopy (PEM) images acquired with an extended sensitivity near-infrared camera. A detailed analysis of the detection of thermal radiation, as well as leakage and switching signal components will be presented as a function of the camera spectral tailoring. Time-integrated and Time-Resolved Emission (TRE) measurements collected from a 32 nm SOI testchip are used to show that the leakage component is dependent on temperature, while the switching is not. Moreover, the different SNR optimization based on camera spectral tailoring and chip operating temperature is shown for different types of measurements.