Title :
General features of progressive breakdown in gate oxides: A compact model
Author :
Palumbo, Felix ; Eizenberg, Moshe ; Lombardo, Salvatore
Author_Institution :
Dept. of Mater. Sci. & Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
We show and discuss some general features of dielectric breakdown of ultra-thin gate oxides for CMOS. We discuss III-V devices with high-k/metal gate, and compare to more classical structures with silicon substrates, SiOxNy or high-k as gate dielectrics, and poly-Si or metal gate. A model of the breakdown growth dependence on voltage, temperature, oxide thickness, etc., is discussed and compared to data.
Keywords :
CMOS integrated circuits; III-V semiconductors; electric breakdown; high-k dielectric thin films; integrated circuit modelling; CMOS process; III-V devices; Si; breakdown growth dependence; compact model; dielectric breakdown; gate dielectrics; high-k-metal gate; progressive breakdown; ultra-thin gate oxides; Aluminum oxide; Dielectrics; Hafnium compounds; Logic gates; Silicon; Substrates; III-V MOS devices; electromigration; oxide breakdown; progressive breakdown;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112737
