Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays

We conduct a thorough investigation of random telegraph noise (RTN) dependence on program/erase and read/bake conditions in state-of-the-art 1X and 2X Flash NAND technologies. We demonstrate that RTN depends only on the cycle number and not on the program level or cycling pattern. Moreover, if the cumulative distribution of RTN is considered, a negligible temperature dependence appears, in apparent contrast with thermal activation of single-trap time constants. RTN appears also to be independent of the read and bake temperature, although a slight asymmetry in the distribution tails is induced by charge detrapping. A Monte Carlo model is also presented to account for the experimental observations.