Title :
Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications
Author :
Kothandaraman, C. ; Chen, X. ; Moy, D. ; Lea, D. ; Rosenblatt, S. ; Khan, F. ; Leu, D. ; Kirihata, T. ; Ioannou, D. ; LaRosa, G. ; Johnson, J.B. ; Robson, N. ; Iyer, S.S.
Author_Institution :
Semicond. R&D Center, IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
We explore the use of oxygen vacancies for nonvolatile data storage by trapping electrons in the high-k, gate dielectric layer of NFETs. Programming is performed via channel carrier injection and is erased by tunneling. 64Kb arrays were constructed and reliability is demonstrated.
Keywords :
circuit reliability; dielectric materials; electron traps; field effect transistors; random-access storage; semiconductor device reliability; tunnelling; NFET; channel carrier injection; embedded memory application; high-k-metal gate dielectric layer; nonvolatile data storage; oxygen vacancy trap; reliability; storage capacity 64 Kbit; trapping electron; tunneling; CMOS integrated circuits; Charge carrier processes; Hafnium compounds; Logic gates; Programming; Reliability; Transistors; 3D integration; CMOS; carrier trapping; hafnium-oxide; high-K/Metal gate non-volatile memory;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112816
