Impact of package on neutron induced single event upset in 20 nm SRAM

Author

Uemura, Taiki ; Kato, Takashi ; Matsuyama, Hideya ; Hashimoto, Masanori

Author_Institution

Fujitsu Semicond. Ltd., Tokyo, Japan

fYear

2015

fDate

19-23 April 2015

Abstract

This work investigates the impact of package structure on single event upset (SEU) rate through neutron irradiation test and Monte Carlo simulation of the particles passage. Irradiation test results show that the resin existing in the upper stream of the beam could increase SEU rate by about 10 %. The simulation result demonstrates that light secondary particles generated in the package materials, such as proton and alpha particles, contribute to the SEU rate elevation. Therefore, SEU rate evaluation should pay attention to the package structure especially for low voltage devices having low critical charge of 0.4 fC and below.

Keywords

Monte Carlo methods; SRAM chips; integrated circuit packaging; integrated circuit testing; radiation hardening (electronics); Monte Carlo simulation; SEU rate elevation; SRAM; alpha particle; light secondary particle passage generation; neutron induced single event upset; neutron irradiation testing; package material structure; proton; size 20 nm; Alpha particles; Neutrons; Protons; Radiation effects; Random access memory; Single event upsets; Neutron irradiation test; Package; Resin; SRAM; Single event upset (SEU);

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112828

Filename

7112828