DocumentCode :
710367
Title :
An in-pixel equalizer with kTC noise cancellation and FPN reduction for time-of-flight CMOS image sensor
Author :
Zheng-Wei Huang ; Chin-Fong Chiu ; Chih-Cheng Hsieh
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
4
Abstract :
Conventional TOF depth image sensors have suffered from the reset kBTC noise of required accumulation readout of multiple-phase signal without feasible correlated double sampling (CDS) operation. This paper presents a new TOF pixel circuit with kBTC reset noise cancellation by proposed equalized reset (ER) operation. Accompanied with the differential operation of phase modulation readout for depth calculation, ER pixel effective cancel out the reset noise and reduce fixed pattern noise as well. For background suppression, sub-integrating (SI) operation is also proposed to extend the dynamic range for various applications. A prototype chip with 64×128 pixel array and 3.3V operation has been designed and fabricated in 0.13μm CMOS image sensor (CIS) technology. The pixel pitch is 10×10 um2 with a fill factor of 24.9%; and the chip size is 2.5mm×2.2mm. The measurement result shows 67% reduction of pixel fixed-pattern-noise (FPN), 300uV cancellation of kTC noise, and 23.1dB SNR improvement compared to the counterpart without ER and SI operation.
Keywords :
CMOS image sensors; correlation methods; integrated circuit noise; noise abatement; phase modulation; readout electronics; sampling methods; CDS; CIS; ER operation; FPN reduction; SI operation; TOF depth image sensor; TOF pixel circuit; background suppression; correlated double sampling; in-pixel equalizer reset operation; kBTC reset noise cancellation; multiple-phase signal readout; noise figure 23.1 dB; phase modulation readout; pixel fixed-pattern-noise; reduce fixed pattern noise; size 0.13 mum; subintegrating operation; time-of-flight CMOS image sensor; voltage 3.3 V; voltage 300 muV; Dynamic range; Erbium; Image sensors; Noise cancellation; Signal to noise ratio; Silicon; 3-D pixel; CMOS image sensor; Time-of-flight(TOF); depth image;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-DAT.2015.7114520
Filename :
7114520
Link To Document :
بازگشت