DocumentCode :
710388
Title :
IC design challenges and opportunities for advanced process technology
Author :
Lee, Hsien-Hsin S.
Author_Institution :
Design Methodology & Kit Dev. Div., Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
Moore´s Law has entered a new frontier as the incessant progress of device scaling continues to excel in 10nm and beyond. As the physical dimension of devices and interconnect are being shrunk, the design rules and the design flow, for both ASIC and custom designs, face unprecedented complexity. Hence, common IC design practice can no longer separate the design and the process fabrication indifferently. Conventional design optimization techniques also need to take the novel process technologies, such as multi-gate devices (e.g., FinFET), spacer technology, and self-aligned multiple patterning lithography, into account in order to achieve the best possible performance, power, and area for a design. In this talk, the challenges and implication of these new process technologies to IC designers will be touched upon from the foundry´s perspective to show how and what to innovate in EDA tools for bridging the gap between physical design and foundry fabrication, and then finally improve the overall design quality and productivity.
Keywords :
electronic design automation; integrated circuit design; ASIC design; EDA tool; FinFET; IC design challenge; Moore law; advanced process technology; design optimization technique; design quality; device scaling; foundry fabrication; multigate devices; physical design; self-aligned multiple-patterning lithography; spacer technology; Analytical models; Complexity theory; FinFETs; Foundries; Integrated circuits; Lithography; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-DAT.2015.7114549
Filename :
7114549
Link To Document :
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