DocumentCode
710394
Title
Prospect of embedded non-volatile memory in the smart society
Author
Yamauchi, Tadaaki
Author_Institution
Renesas Electron. Corp., Tokyo, Japan
fYear
2015
fDate
27-29 April 2015
Firstpage
1
Lastpage
2
Abstract
Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.
Keywords
flash memories; masks; random-access storage; NV memory; ReRAM; STT-MRAM; adaptive tuning; add-on type eFlash; automotive application; cost reduction; data flash; embedded flash; embedded nonvolatile memory; mask; normally-off system; security; smart society; split-gate charge-trapping memory; Automotive engineering; Consumer electronics; Memory management; Nonvolatile memory; Reliability; Safety; Security;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-DAT.2015.7114556
Filename
7114556
Link To Document