• DocumentCode
    710459
  • Title

    32 GHz germanium bipolar phototransistors on silicon photonics

  • Author

    Going, Ryan ; Keraly, Christopher ; Tae Joon Seok ; Yablonovich, Eli ; Wu, Ming C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
  • fYear
    2015
  • fDate
    20-22 April 2015
  • Firstpage
    38
  • Lastpage
    39
  • Abstract
    We present designs and simulations for a 32 GHz fT 3-terminal germanium bipolar phototransitor for high-sensitivity 10 GB/s receiving. We also experimentally demonstrate a preliminary, non-optimized phototransistor with 14 GHz fT built on silicon photonics.
  • Keywords
    elemental semiconductors; germanium; integrated optoelectronics; microwave bipolar transistors; millimetre wave bipolar transistors; phototransistors; silicon; 3-terminal germanium bipolar phototransitor; Ge-Si; frequency 32 GHz to 14 GHz; high-sensitivity; nonoptimized phototransistor; silicon photonics; Gain; Germanium; Optical sensors; Optical waveguides; Phototransistors; Silicon photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference (OI), 2015 IEEE
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4799-8178-6
  • Type

    conf

  • DOI
    10.1109/OIC.2015.7115675
  • Filename
    7115675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=710459